![]() ![]() No relations were found for Si(100) wafers. The study of the relation between the mobility, channel direction and wafer orientation revealed that the channel direction had a significant impact on the mobility for transistors fabricated on Si(110) wafers, the highest electron and hole mobilites being obtained for a channel along the and directions, respectively. Authors then developed a more accurate mobility model able to simulate not only the drivability but also the transconductance for these same devices. ![]() They showed that the methods developed to extract the conduction parameters cannot be implemented for Si(110) p-MOSFETs. Authors investigate the carrier mobility in field-effect transistors mainly when fabricated on Si(110) wafers. ![]()
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